In this paper, we investigate the operating principle and the injection efficiency of the punch-through-assisted hot hole injection mechanism for programming nonvolatile memory cells by means of full-band Monte Carlo transport simulations of realistic device structures. The effects of terminal bias and cell scaling on the injection efficiency and the uniformity of charge injection along the channel are analyzed in detail.
A simulation study of the Punch-through Assisted Hot Holes Injection mechanism for non-volatile-memory cells / Iellina, Matteo; Palestri, Pierpaolo; Akil, N.; VAN DUUREN, M.; Driussi, Francesco; Esseni, David; Selmi, Luca. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 57:5(2010), pp. 1055-1062. [10.1109/TED.2010.2043396]
A simulation study of the Punch-through Assisted Hot Holes Injection mechanism for non-volatile-memory cells
SELMI, Luca
2010-01-01
Abstract
In this paper, we investigate the operating principle and the injection efficiency of the punch-through-assisted hot hole injection mechanism for programming nonvolatile memory cells by means of full-band Monte Carlo transport simulations of realistic device structures. The effects of terminal bias and cell scaling on the injection efficiency and the uniformity of charge injection along the channel are analyzed in detail.
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