We present a Monte Carlo simulator for RF graphene FETs including the dominant scattering mechanisms and a simple model for band-to-band tunneling. We found that in state-ofthe- art devices scattering is relevant and degrades the cut-off frequency compared to the predictions of ballistic models.
Simulation of graphene nanoscale RF transistors including scattering and generation/recombination mechanisms / Paussa, A; Geromel, M; Palestri, Pierpaolo; Bresciani, M; Esseni, David; Selmi, Luca. - (2011), pp. 271-274. (Intervento presentato al convegno 2011 IEEE International Electron Devices Meeting, IEDM 2011 tenutosi a Washington, DC, usa nel 2011) [10.1109/IEDM.2011.6131536].
Simulation of graphene nanoscale RF transistors including scattering and generation/recombination mechanisms
PALESTRI, Pierpaolo;SELMI, Luca
2011
Abstract
We present a Monte Carlo simulator for RF graphene FETs including the dominant scattering mechanisms and a simple model for band-to-band tunneling. We found that in state-ofthe- art devices scattering is relevant and degrades the cut-off frequency compared to the predictions of ballistic models.
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