This paper analyzes MOSFET gate currents in the so-called channel initiated secondary electron injection regime (CHISEL). A Monte Carlo model of the phenomenon is validated and then extensively used to explore CHISEL scaling laws. Results indicate that, compared to conventional channel hot electron injection (CHE), CHISEL exhibits a weaker dependence on channel length and a larger sensitivity to short channel effects. These results are confirmed experimentally and exhaustively explained with the help of simulations; furthermore, some of their possible detrimental consequences on the programming efficiency of CHISEL based flash cells are analyzed. Finally, the impact of channel doping, oxide thickness, and junction depth on CHISEL efficiency has been explored, and guidelines to maintain high injection efficiency in short devices are derived.
Injection Efficiency of CHISEL Gate Currents in Short MOS Devices: Physical Mechanisms, Device Implications and Sensitivity to Technological Parameters", / Esseni, David; Selmi, Luca; A., Ghetti; Sangiorgi, Enrico. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 47:11(2000), pp. 2194-2200. [10.1109/16.877183]
Injection Efficiency of CHISEL Gate Currents in Short MOS Devices: Physical Mechanisms, Device Implications and Sensitivity to Technological Parameters",
SELMI, Luca;
2000
Abstract
This paper analyzes MOSFET gate currents in the so-called channel initiated secondary electron injection regime (CHISEL). A Monte Carlo model of the phenomenon is validated and then extensively used to explore CHISEL scaling laws. Results indicate that, compared to conventional channel hot electron injection (CHE), CHISEL exhibits a weaker dependence on channel length and a larger sensitivity to short channel effects. These results are confirmed experimentally and exhaustively explained with the help of simulations; furthermore, some of their possible detrimental consequences on the programming efficiency of CHISEL based flash cells are analyzed. Finally, the impact of channel doping, oxide thickness, and junction depth on CHISEL efficiency has been explored, and guidelines to maintain high injection efficiency in short devices are derived.Pubblicazioni consigliate
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