A new technique is presented to extract the main parameters required for transistor modeling at low longitudinal fields (parasitic resistance, intrinsic conductivity factor, threshold voltage, and body factor k) from a single MOSFET. The method makes use of easy-to-perform ac frequency-resolved measurements to overcome repeatability and accuracy problems encountered with de data. The technique has been satisfactorily validated on MOSFET's down to 0.8 mu m channel length.
Frequency Resolved Measurements for the Characterization of MOSFET Parameters at Low Longitudinal Fields / Selmi, Luca; Ricco, B.. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 42:2(1995), pp. 315-320. [10.1109/16.370063]
Frequency Resolved Measurements for the Characterization of MOSFET Parameters at Low Longitudinal Fields
SELMI, Luca;
1995
Abstract
A new technique is presented to extract the main parameters required for transistor modeling at low longitudinal fields (parasitic resistance, intrinsic conductivity factor, threshold voltage, and body factor k) from a single MOSFET. The method makes use of easy-to-perform ac frequency-resolved measurements to overcome repeatability and accuracy problems encountered with de data. The technique has been satisfactorily validated on MOSFET's down to 0.8 mu m channel length.
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