A detailed experimental study of the spectral distribution of hot-electron-induced photon emission in n-channel MOSFETs is presented. The study significantly improves on previous work by considering energies up to 3.1 eV and different operating temperatures. It is shown that in contrast with previous results, the photon energy distribution is markedly non-Maxwellian, thus suggesting that the same is true for the energy distribution of the channel electrons.
Hot-Electron induced Photon Energies in n-channel MOSFET’s operating at 77 and 300 K / Lanzoni, M; Manfredi, M; Selmi, Luca; Sangiorgi, Enrico; Cappelletti, R; Ricco, B.. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - STAMPA. - 10:5(1989), pp. 173-175. [10.1109/55.31711]
Hot-Electron induced Photon Energies in n-channel MOSFET’s operating at 77 and 300 K
SELMI, Luca;
1989
Abstract
A detailed experimental study of the spectral distribution of hot-electron-induced photon emission in n-channel MOSFETs is presented. The study significantly improves on previous work by considering energies up to 3.1 eV and different operating temperatures. It is shown that in contrast with previous results, the photon energy distribution is markedly non-Maxwellian, thus suggesting that the same is true for the energy distribution of the channel electrons.
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