We present a newly developed model for Tunnel- FET (TFET) devices capable to describe band-toband tunneling (BtBT) as well as off-equilibrium transport of the generated carriers. BtBT generation is implemented as an add-on into an existing Multi-subband Monte Carlo (MSMC) transport simulator that accounts for the effects of alternative channel materials and high- dielectrics. A simple correction for the calculation of the BtBT generation rate is proposed to account for carrier confinement in the subbands.

Multi-Subband Semi-classical Simulation of n-type Tunnel-FETs / Revelant, Alberto; Palestri, Pierpaolo; Selmi, Luca. - STAMPA. - (2012), pp. 233-236. (Intervento presentato al convegno 2012 13th International Conference on Ultimate Integration on Silicon, ULIS 2012 tenutosi a Grenoble, fra nel 2012) [10.1109/ULIS.2012.6193389].

Multi-Subband Semi-classical Simulation of n-type Tunnel-FETs

PALESTRI, Pierpaolo;SELMI, Luca
2012

Abstract

We present a newly developed model for Tunnel- FET (TFET) devices capable to describe band-toband tunneling (BtBT) as well as off-equilibrium transport of the generated carriers. BtBT generation is implemented as an add-on into an existing Multi-subband Monte Carlo (MSMC) transport simulator that accounts for the effects of alternative channel materials and high- dielectrics. A simple correction for the calculation of the BtBT generation rate is proposed to account for carrier confinement in the subbands.
2012
2012 13th International Conference on Ultimate Integration on Silicon, ULIS 2012
Grenoble, fra
2012
233
236
Revelant, Alberto; Palestri, Pierpaolo; Selmi, Luca
Multi-Subband Semi-classical Simulation of n-type Tunnel-FETs / Revelant, Alberto; Palestri, Pierpaolo; Selmi, Luca. - STAMPA. - (2012), pp. 233-236. (Intervento presentato al convegno 2012 13th International Conference on Ultimate Integration on Silicon, ULIS 2012 tenutosi a Grenoble, fra nel 2012) [10.1109/ULIS.2012.6193389].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1163198
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