We present a newly developed model for Tunnel- FET (TFET) devices capable to describe band-toband tunneling (BtBT) as well as off-equilibrium transport of the generated carriers. BtBT generation is implemented as an add-on into an existing Multi-subband Monte Carlo (MSMC) transport simulator that accounts for the effects of alternative channel materials and high- dielectrics. A simple correction for the calculation of the BtBT generation rate is proposed to account for carrier confinement in the subbands.
Multi-Subband Semi-classical Simulation of n-type Tunnel-FETs / Revelant, Alberto; Palestri, Pierpaolo; Selmi, Luca. - STAMPA. - (2012), pp. 233-236. (Intervento presentato al convegno 2012 13th International Conference on Ultimate Integration on Silicon, ULIS 2012 tenutosi a Grenoble, fra nel 2012) [10.1109/ULIS.2012.6193389].
Multi-Subband Semi-classical Simulation of n-type Tunnel-FETs
PALESTRI, Pierpaolo;SELMI, Luca
2012
Abstract
We present a newly developed model for Tunnel- FET (TFET) devices capable to describe band-toband tunneling (BtBT) as well as off-equilibrium transport of the generated carriers. BtBT generation is implemented as an add-on into an existing Multi-subband Monte Carlo (MSMC) transport simulator that accounts for the effects of alternative channel materials and high- dielectrics. A simple correction for the calculation of the BtBT generation rate is proposed to account for carrier confinement in the subbands.
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