In this work a non-local band-to-band tunnelling model has been successfully implemented into a fullband Monte Carlo simulator and applied to Tunnel-FET devices. No stability or statistical noise problems were encountered in spite of particle weights ranging over many orders of magnitude (due to vastly different generation rates at different positions inside the device and biases) so that Tunnel-FET I–V curves could be traced over the whole on–off range. Different approaches for the choice of the tunnelling path have been compared and relevant differences are observed in both the current levels and the spatial distribution of the generated carriers.
Effect of the choice of the tunnelling path on semi-classical numerical simulations of TFET devices / De Michielis, L., Iellina, M., Palestri, P., Ionescu, A., Selmi, L.. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - STAMPA. - 71:5(2012), pp. 7-12. [10.1016/j.sse.2011.10.012]
Effect of the choice of the tunnelling path on semi-classical numerical simulations of TFET devices
PALESTRI, Pierpaolo;SELMI, Luca
2012
Abstract
In this work a non-local band-to-band tunnelling model has been successfully implemented into a fullband Monte Carlo simulator and applied to Tunnel-FET devices. No stability or statistical noise problems were encountered in spite of particle weights ranging over many orders of magnitude (due to vastly different generation rates at different positions inside the device and biases) so that Tunnel-FET I–V curves could be traced over the whole on–off range. Different approaches for the choice of the tunnelling path have been compared and relevant differences are observed in both the current levels and the spatial distribution of the generated carriers.
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