We present a novel non-volatile memory cell architecture, which remarkably improves injection efficiency overconventional channel hot electron programming. We show how this superior performance can be traded to achieve either lowvoltage-low power or high-speed operation. The cell concept is validated by means of numerical device simulations. Criteriafor device optimization are also discussed.
BipFLASH: a Novel Non-Volatile Memory Cell Concept for High Speed - Low Power Applications / Esseni, David; Selmi, Luca. - In: MICROELECTRONIC ENGINEERING. - ISSN 0167-9317. - ELETTRONICO. - 59:1-4(2001), pp. 231-236. [10.1016/S0167-9317(01)00628-1]
BipFLASH: a Novel Non-Volatile Memory Cell Concept for High Speed - Low Power Applications
SELMI, Luca
2001
Abstract
We present a novel non-volatile memory cell architecture, which remarkably improves injection efficiency overconventional channel hot electron programming. We show how this superior performance can be traded to achieve either lowvoltage-low power or high-speed operation. The cell concept is validated by means of numerical device simulations. Criteriafor device optimization are also discussed.
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