A recently developed self-consistent Monte-Carlo (MC) simulator of confined electron's transport in the inversion layer of nano-MOSFETs is used to analyze three nano-scale ultra-thin body (UTB) SOI MOSFETs. The effect of the subband structure and carrier degeneracy as well as the relative importance of different scattering mechanisms is discussed.
Simulation of Double-Gate nano-MOSFETs with the Multi-subband Monte Carlo Method / Lucci, Luca; Palestri, Pierpaolo; Esseni, David; Selmi, Luca. - STAMPA. - (2006), pp. 89-92. (Intervento presentato al convegno European Workshop on Ultimate Integration of Silicon (ULIS) tenutosi a Grenoble (F) nel Aprile 2006).
Simulation of Double-Gate nano-MOSFETs with the Multi-subband Monte Carlo Method
PALESTRI, Pierpaolo;SELMI, Luca
2006
Abstract
A recently developed self-consistent Monte-Carlo (MC) simulator of confined electron's transport in the inversion layer of nano-MOSFETs is used to analyze three nano-scale ultra-thin body (UTB) SOI MOSFETs. The effect of the subband structure and carrier degeneracy as well as the relative importance of different scattering mechanisms is discussed.
| File | Dimensione | Formato | |
|---|---|---|---|
|
2006_04_ULIS_Lucci_SimulationDoubleGate.pdf
Accesso riservato
Dimensione
381.72 kB
Formato
Adobe PDF
|
381.72 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris
