This paper studies the impact of high-mobility materials on the performance and energy efficiency of near- and sub- threshold CMOS logic circuits by means of analytical equations and experimental data on SiGe pMOSFETs. The introduction of high-mobility materials is shown to improve the energy- performance trade-off in near-threshold circuits more than in above-threshold circuits, since the benefits of higher mobility are degraded at higher longitudinal and transversal electric fields. On the other hand, results show that high-mobility materials do not exhibit any advantage in terms of the energy-performance trade-off in sub-threshold logic circuits. This is explained by the fact that the benefits brought by the larger mobility of SiGe or other alternative materials can be obtained by tuning the threshold voltage of conventional Si devices.

Impact of High-Mobility Materials on the Performance of Near- and Sub-Threshold CMOS Logic Circuits / Crupi, F; Albano, D; Alioto, M; Franco, J; Selmi, Luca; Mitard, J; Groeseneken, G.. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 60:3(2013), pp. 972-977. [10.1109/TED.2013.2240685]

Impact of High-Mobility Materials on the Performance of Near- and Sub-Threshold CMOS Logic Circuits

SELMI, Luca;
2013

Abstract

This paper studies the impact of high-mobility materials on the performance and energy efficiency of near- and sub- threshold CMOS logic circuits by means of analytical equations and experimental data on SiGe pMOSFETs. The introduction of high-mobility materials is shown to improve the energy- performance trade-off in near-threshold circuits more than in above-threshold circuits, since the benefits of higher mobility are degraded at higher longitudinal and transversal electric fields. On the other hand, results show that high-mobility materials do not exhibit any advantage in terms of the energy-performance trade-off in sub-threshold logic circuits. This is explained by the fact that the benefits brought by the larger mobility of SiGe or other alternative materials can be obtained by tuning the threshold voltage of conventional Si devices.
2013
60
3
972
977
Impact of High-Mobility Materials on the Performance of Near- and Sub-Threshold CMOS Logic Circuits / Crupi, F; Albano, D; Alioto, M; Franco, J; Selmi, Luca; Mitard, J; Groeseneken, G.. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 60:3(2013), pp. 972-977. [10.1109/TED.2013.2240685]
Crupi, F; Albano, D; Alioto, M; Franco, J; Selmi, Luca; Mitard, J; Groeseneken, G.
File in questo prodotto:
File Dimensione Formato  
FinalPublished06457444.pdf

Accesso riservato

Dimensione 280.27 kB
Formato Adobe PDF
280.27 kB Adobe PDF   Visualizza/Apri   Richiedi una copia
FinalPublished06457444.pdf

Accesso riservato

Dimensione 280.27 kB
Formato Adobe PDF
280.27 kB Adobe PDF   Visualizza/Apri   Richiedi una copia
Pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1163144
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 11
  • ???jsp.display-item.citation.isi??? 9
social impact