Monte-Carlo simulations including quantum corrections to the potential are used to study electronic transport in Bulk and Double Gate (DG) SOI MOSFETs with LG down to 14 nm. The ON current (ION) and the ballistic current IBL of MOSFETs designed according to the 2003 Roadmap down to the 45 nm node are analyzed. Our results show that, for the explored LG values, scattering still controls ION; thanks to a lower transversal electric field, the DG SOI MOSFETs with low channel doping allow to get closer to the ballistic limit than bulk counterparts.
Monte-Carlo Analysis of Ballistic Transport in MOSFETs along the ITRS Roadmap / Palestri, Pierpaolo; S., Eminente; Esseni, David; C., Fiegna; Selmi, Luca; E., Sangiorgi. - (2005), pp. 57-60. (Intervento presentato al convegno European Workshop on Ultimate Integration of Silicon (ULIS) tenutosi a Bologna (Italia) nel april 2005).
Monte-Carlo Analysis of Ballistic Transport in MOSFETs along the ITRS Roadmap
PALESTRI, Pierpaolo;SELMI, Luca;
2005
Abstract
Monte-Carlo simulations including quantum corrections to the potential are used to study electronic transport in Bulk and Double Gate (DG) SOI MOSFETs with LG down to 14 nm. The ON current (ION) and the ballistic current IBL of MOSFETs designed according to the 2003 Roadmap down to the 45 nm node are analyzed. Our results show that, for the explored LG values, scattering still controls ION; thanks to a lower transversal electric field, the DG SOI MOSFETs with low channel doping allow to get closer to the ballistic limit than bulk counterparts.
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