The goal of this work is to give a clear physical comprehension of the charge loss mechanisms of SANOS (Si/Al2O3/Si3N4/SiO2/Si) memories. Retention at room and high temperature is investigated on different samples through experiments and theoretical modeling. We argue that at room temperature, the charge loss essentially results from the tunneling of the electrons trapped at the nitride interface, and the retention life time increases with the nitride thickness. On the contrary, at high temperature, the trapped charges in the nitride volume quickly redistribute, thanks to the thermal emission process, and they migrate to the nitride interface. Indeed, this result suggests that thin-nitride thicknesses in SANOS devices allow keeping a fast program/erase speed without degrading the retention at high temperature.

An in-depth investigation of physical mechanisms governing SANOS memories characteristics / M., Bocquet; Vianello, Elisa; G., Molas; L., Perniola; H., Grampeix; F., Martin; J. P., Colonna; A. M., Papon; P., Brianceau; M., Gély; B., De Salvo; G., Pananakakis; G., Ghibaudo; Selmi, Luca. - (2009), pp. 1-4. (Intervento presentato al convegno 2009 IEEE International Memory Workshop, IMW '09 tenutosi a Monterey, CA, usa nel 2009) [10.1109/IMW.2009.5090579].

An in-depth investigation of physical mechanisms governing SANOS memories characteristics

SELMI, Luca
2009

Abstract

The goal of this work is to give a clear physical comprehension of the charge loss mechanisms of SANOS (Si/Al2O3/Si3N4/SiO2/Si) memories. Retention at room and high temperature is investigated on different samples through experiments and theoretical modeling. We argue that at room temperature, the charge loss essentially results from the tunneling of the electrons trapped at the nitride interface, and the retention life time increases with the nitride thickness. On the contrary, at high temperature, the trapped charges in the nitride volume quickly redistribute, thanks to the thermal emission process, and they migrate to the nitride interface. Indeed, this result suggests that thin-nitride thicknesses in SANOS devices allow keeping a fast program/erase speed without degrading the retention at high temperature.
2009
2009 IEEE International Memory Workshop, IMW '09
Monterey, CA, usa
2009
1
4
M., Bocquet; Vianello, Elisa; G., Molas; L., Perniola; H., Grampeix; F., Martin; J. P., Colonna; A. M., Papon; P., Brianceau; M., Gély; B., De Salvo; G., Pananakakis; G., Ghibaudo; Selmi, Luca
An in-depth investigation of physical mechanisms governing SANOS memories characteristics / M., Bocquet; Vianello, Elisa; G., Molas; L., Perniola; H., Grampeix; F., Martin; J. P., Colonna; A. M., Papon; P., Brianceau; M., Gély; B., De Salvo; G., Pananakakis; G., Ghibaudo; Selmi, Luca. - (2009), pp. 1-4. (Intervento presentato al convegno 2009 IEEE International Memory Workshop, IMW '09 tenutosi a Monterey, CA, usa nel 2009) [10.1109/IMW.2009.5090579].
File in questo prodotto:
File Dimensione Formato  
2008_IMW_Bocquet-Vianello_AnInDepth.pdf

Accesso riservato

Dimensione 906.7 kB
Formato Adobe PDF
906.7 kB Adobe PDF   Visualizza/Apri   Richiedi una copia
Pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1163112
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 4
  • ???jsp.display-item.citation.isi??? 2
social impact