This paper employs a state-of-the-art semi-classical transport model for inversion layers to analyze the Ion in Si, sSi, Ge and sGe n- and p-MOSFETs by accounting for all the relevant scattering mechanisms (including the remote surface-optical phonons (SOph) and remote Coulomb scattering (remQ) related to high-κ dielectrics), in which strain is implicitly introduced by a modification of the band structure. Our models are first validated against experiments for both mobility and IDS in nanoscale transistors. Then the Ion in Ge and Si MOSFETs is compared for different crystal orientations and strain conditions.
Simulation study of the on-current improvements in Ge and sGe versus Si and sSi nano-MOSFETs / Conzatti, F., Toniutti, P., Esseni, D., Palestri, P., Selmi, L.. - (2010), pp. 363-366. (2010 IEEE International Electron Devices Meeting, IEDM 2010 San Francisco, CA, usa Dicembre) [10.1109/IEDM.2010.5703366].
Simulation study of the on-current improvements in Ge and sGe versus Si and sSi nano-MOSFETs
PALESTRI, Pierpaolo;SELMI, Luca
2010
Abstract
This paper employs a state-of-the-art semi-classical transport model for inversion layers to analyze the Ion in Si, sSi, Ge and sGe n- and p-MOSFETs by accounting for all the relevant scattering mechanisms (including the remote surface-optical phonons (SOph) and remote Coulomb scattering (remQ) related to high-κ dielectrics), in which strain is implicitly introduced by a modification of the band structure. Our models are first validated against experiments for both mobility and IDS in nanoscale transistors. Then the Ion in Ge and Si MOSFETs is compared for different crystal orientations and strain conditions.
Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris
