This paper investigates with a mixed device/circuit simulation methodology the effectiveness of DG SOI MOSFETs compared to conventional bulkMOSFETs for the implementation of low standby power circuit techniques. Our results indicate that DG MOSFETs offer significant advantages essentially because of the larger VT sensitivity to back-biasing.
Trading off static power and dynamic performance in CMOS digital circuits: bulk versus double gate SOI MOSFETs / Agostinelli, Matteo; Alioto, M.; Esseni, David; Selmi, Luca. - 2007:(2007), pp. 191-194. (Intervento presentato al convegno ESSDERC 2007 - 37th European Solid-State Device Research Conference tenutosi a Munich, deu nel 11-13/09/2007) [10.1109/ESSDERC.2007.4430911].
Trading off static power and dynamic performance in CMOS digital circuits: bulk versus double gate SOI MOSFETs
SELMI, Luca
2007
Abstract
This paper investigates with a mixed device/circuit simulation methodology the effectiveness of DG SOI MOSFETs compared to conventional bulkMOSFETs for the implementation of low standby power circuit techniques. Our results indicate that DG MOSFETs offer significant advantages essentially because of the larger VT sensitivity to back-biasing.
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