This paper investigates with a mixed device/circuit simulation methodology the effectiveness of DG SOI MOSFETs compared to conventional bulkMOSFETs for the implementation of low standby power circuit techniques. Our results indicate that DG MOSFETs offer significant advantages essentially because of the larger VT sensitivity to back-biasing.
Trading off static power and dynamic performance in CMOS digital circuits: bulk versus double gate SOI MOSFETs / Agostinelli, Matteo; Alioto, M.; Esseni, David; Selmi, Luca. - (2007), pp. 191-194. (Intervento presentato al convegno Proceedings ESSDERC2007 Conference tenutosi a Munich (D), 11-13 settembre 2007 nel 11-13/09/2007) [10.1109/ESSDERC.2007.4430911].
Trading off static power and dynamic performance in CMOS digital circuits: bulk versus double gate SOI MOSFETs
SELMI, Luca
2007-01-01
Abstract
This paper investigates with a mixed device/circuit simulation methodology the effectiveness of DG SOI MOSFETs compared to conventional bulkMOSFETs for the implementation of low standby power circuit techniques. Our results indicate that DG MOSFETs offer significant advantages essentially because of the larger VT sensitivity to back-biasing.
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