This paper presents experimental evidence of relevant three-dimensional (3-D) effects in CMOS latch-up obtained by means of novel multicontact test structures. It is also shown that "quasi"-two-dimensional (2-D) experimental data in good agreement with numerical simulations can be achieved only by limiting the analysis to the central sections of wide experimental devices.
Three dimensional distribution of CMOS Latch-up current / Sangiorgi, E; Ricco, B; Selmi, Luca. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - STAMPA. - 8:4(1987), pp. 154-156. [10.1109/EDL.1987.26585]
Three dimensional distribution of CMOS Latch-up current
SELMI, Luca
1987
Abstract
This paper presents experimental evidence of relevant three-dimensional (3-D) effects in CMOS latch-up obtained by means of novel multicontact test structures. It is also shown that "quasi"-two-dimensional (2-D) experimental data in good agreement with numerical simulations can be achieved only by limiting the analysis to the central sections of wide experimental devices.
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