Dynamic I-V and S-parameter characterization of a medium-power MESFET is presented. In particular, this paper presents an innovative fully automated six-port network analyzer (SPNA) operated in pulse conditions. The results reveal the transient behavior of the GaAs MESFET under pulse conditions which may be attributed to self-heating and/or trap-related anomalies. Furthermore, using standard procedure, these S-parameters could readily be used to extract the dynamic electrical model elements (Cgs, Cgd, Gds, Gm , etc.) of the MESFET. This system is particularly suitable for studying trap-related phenomena and self-heating effects in GaAs devices and for large-signal/power characterization.
Characterization of the Transient Behavior of a GaAs MESFET Using Dynamic I-V and S-parameter Measurements / Begin, M; GHANNOUCHI F., M; Beauregards, F; Selmi, Luca; Ricco, B.. - In: IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT. - ISSN 0018-9456. - STAMPA. - 45:1(1996), pp. 231-237. [10.1109/19.481339]
Characterization of the Transient Behavior of a GaAs MESFET Using Dynamic I-V and S-parameter Measurements
SELMI, Luca;
1996
Abstract
Dynamic I-V and S-parameter characterization of a medium-power MESFET is presented. In particular, this paper presents an innovative fully automated six-port network analyzer (SPNA) operated in pulse conditions. The results reveal the transient behavior of the GaAs MESFET under pulse conditions which may be attributed to self-heating and/or trap-related anomalies. Furthermore, using standard procedure, these S-parameters could readily be used to extract the dynamic electrical model elements (Cgs, Cgd, Gds, Gm , etc.) of the MESFET. This system is particularly suitable for studying trap-related phenomena and self-heating effects in GaAs devices and for large-signal/power characterization.
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