A conventional Monte-Carlo simulator has been extended to include electrostatic and transport effects that are most relevant for the analysis of nano-scale MOSFETs with either bulk or single and double gate SOI architecture and silicon film thickness down to approximately 10nm. Corrections to the self-consistent electrostatic potential and a new model for the surface roughness scattering have been included. The effectiveness of the approach has been tested simulating carrier transport in a 25nm double gate SOI MOSFET.
An improved semiclassical Monte-Carlo approach for nano-scale MOSFET simulation / Palestri, Pierpaolo; Eminente, S; Esseni, David; Fiegna, C; Sangiorgi, E; Selmi, Luca. - (2004), pp. 101-104. (Intervento presentato al convegno International Workshop on Ultimate Integration on Silicon (ULIS) tenutosi a Leuven (Belgio) nel Marzo).
An improved semiclassical Monte-Carlo approach for nano-scale MOSFET simulation
PALESTRI, Pierpaolo;SELMI, Luca
2004
Abstract
A conventional Monte-Carlo simulator has been extended to include electrostatic and transport effects that are most relevant for the analysis of nano-scale MOSFETs with either bulk or single and double gate SOI architecture and silicon film thickness down to approximately 10nm. Corrections to the self-consistent electrostatic potential and a new model for the surface roughness scattering have been included. The effectiveness of the approach has been tested simulating carrier transport in a 25nm double gate SOI MOSFET.
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