This paper analyzes in detail the generation of interface states ( it) and stress-induced leakage current (SILC) during channel hot electron (CHE) stress experiments in the context of a possible hydrogen/deuterium (H/D) isotope effect. Our results show that it generation is related to the hydrogen release (HR) at the Si-SiO2 interface at relatively high where a large isotope effect is found. Instead, for gate voltages ( ) favorable for hot hole injection (HHI) the it creation becomes a unique function of hole fluence and the isotope effect disappears. In the studied stress conditions, we found no experimental evidence supporting a causal relation between SILC generation and HR because no isotope effect is observed even when the corresponding it measurements reveal a very different D/H release rate. Similar to it generation, we found that SILC becomes a unique function of hole fluence at low stress . Relevant implications and extensions of these results to the Fowler-Nordheim (FN) tunneling stress conditions are discussed in the companion paper.

On Interface and Oxide Degradation in VLSI MOSFETs - Part I: Deuterium Effect in CHE Stress Regime / Esseni, David; J. D., Bude; Selmi, Luca. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 49:2(2002), pp. 247-253. [10.1109/16.981214]

On Interface and Oxide Degradation in VLSI MOSFETs - Part I: Deuterium Effect in CHE Stress Regime

SELMI, Luca
2002

Abstract

This paper analyzes in detail the generation of interface states ( it) and stress-induced leakage current (SILC) during channel hot electron (CHE) stress experiments in the context of a possible hydrogen/deuterium (H/D) isotope effect. Our results show that it generation is related to the hydrogen release (HR) at the Si-SiO2 interface at relatively high where a large isotope effect is found. Instead, for gate voltages ( ) favorable for hot hole injection (HHI) the it creation becomes a unique function of hole fluence and the isotope effect disappears. In the studied stress conditions, we found no experimental evidence supporting a causal relation between SILC generation and HR because no isotope effect is observed even when the corresponding it measurements reveal a very different D/H release rate. Similar to it generation, we found that SILC becomes a unique function of hole fluence at low stress . Relevant implications and extensions of these results to the Fowler-Nordheim (FN) tunneling stress conditions are discussed in the companion paper.
2002
49
2
247
253
On Interface and Oxide Degradation in VLSI MOSFETs - Part I: Deuterium Effect in CHE Stress Regime / Esseni, David; J. D., Bude; Selmi, Luca. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 49:2(2002), pp. 247-253. [10.1109/16.981214]
Esseni, David; J. D., Bude; Selmi, Luca
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1162884
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