Electron- and hole-mobility enhancements in biaxially strained metal–oxide–semiconductor transistors are still a matter for active investigation, and this brief presents a critical examination of a recently proposed interpretation of the experimental data, according to which the strain significantly modifies not only the root-mean-square value but also the correlation length of the surface-roughness spectrum.We present a systematic comparison between comprehensive numerical simulations and experiments, which supports such an interpretation.
On the Surface-Roughness Scattering in Biaxially Strained n- and p-MOS Transistors / DE MICHIELIS, Marco; Conzatti, Francesco; Esseni, David; Selmi, Luca. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 58:9(2011), pp. 3219-3223. [10.1109/TED.2011.2158606]
On the Surface-Roughness Scattering in Biaxially Strained n- and p-MOS Transistors
SELMI, Luca
2011
Abstract
Electron- and hole-mobility enhancements in biaxially strained metal–oxide–semiconductor transistors are still a matter for active investigation, and this brief presents a critical examination of a recently proposed interpretation of the experimental data, according to which the strain significantly modifies not only the root-mean-square value but also the correlation length of the surface-roughness spectrum.We present a systematic comparison between comprehensive numerical simulations and experiments, which supports such an interpretation.File | Dimensione | Formato | |
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