This paper presents a nonlocal model for channel hot electron injection in MOSFETs and nonvolatile memories, which includes a full-band description of optical phonon scattering rates and carrier group velocity. By virtue of its efficient formalism, this model can also include carrier–carrier scattering, which has a marked impact on gate current at low gate voltages. The model is compared against full-band Monte Carlo simulations of typical NOR flash devices in terms of distribution functions, bulk current, gate current, and gate current density along the channel. A very good agreement is obtained for various drain and gate voltages and channel lengths.

An Efficient Nonlocal Hot Electron Model Accounting for Electron–Electron Scattering / Zaka, A; Palestri, Pierpaolo; Rafhay, Q; Clerc, R; Iellina, Matteo; Rideau, D; Tavernier, C; Pananakis, G; Herven, J; Selmi, Luca. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 59:4(2012), pp. 983-993. [10.1109/TED.2012.2183600]

An Efficient Nonlocal Hot Electron Model Accounting for Electron–Electron Scattering

PALESTRI, Pierpaolo;SELMI, Luca
2012

Abstract

This paper presents a nonlocal model for channel hot electron injection in MOSFETs and nonvolatile memories, which includes a full-band description of optical phonon scattering rates and carrier group velocity. By virtue of its efficient formalism, this model can also include carrier–carrier scattering, which has a marked impact on gate current at low gate voltages. The model is compared against full-band Monte Carlo simulations of typical NOR flash devices in terms of distribution functions, bulk current, gate current, and gate current density along the channel. A very good agreement is obtained for various drain and gate voltages and channel lengths.
2012
59
4
983
993
An Efficient Nonlocal Hot Electron Model Accounting for Electron–Electron Scattering / Zaka, A; Palestri, Pierpaolo; Rafhay, Q; Clerc, R; Iellina, Matteo; Rideau, D; Tavernier, C; Pananakis, G; Herven, J; Selmi, Luca. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 59:4(2012), pp. 983-993. [10.1109/TED.2012.2183600]
Zaka, A; Palestri, Pierpaolo; Rafhay, Q; Clerc, R; Iellina, Matteo; Rideau, D; Tavernier, C; Pananakis, G; Herven, J; Selmi, Luca
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1162870
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