We present a simple approach to describe electrolytes in TCAD simulators for the modeling of nano-biosensors. The method exploits the similarity between the transport equations for electrons and holes in semiconductors and the ones for charged ions in a solution. We describe a few workarounds to improve the model accuracy in spite of the limitations of commercial TCAD. Applications to the simulations of silicon nanowire and nanoelectrode biosensors are reported as relevant examples.
Models for the use of commercial TCAD in the analysis of silicon-based integrated biosensors / Pittino, Federico; Palestri, Pierpaolo; Scarbolo, Paolo; Esseni, David; Selmi, Luca. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - STAMPA. - 98:(2014), pp. 63-69. [10.1016/j.sse.2014.04.011]
Models for the use of commercial TCAD in the analysis of silicon-based integrated biosensors
PALESTRI, Pierpaolo;SELMI, Luca
2014
Abstract
We present a simple approach to describe electrolytes in TCAD simulators for the modeling of nano-biosensors. The method exploits the similarity between the transport equations for electrons and holes in semiconductors and the ones for charged ions in a solution. We describe a few workarounds to improve the model accuracy in spite of the limitations of commercial TCAD. Applications to the simulations of silicon nanowire and nanoelectrode biosensors are reported as relevant examples.
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