This paper investigates the electrical performance improvements induced by appropriate strain conditions in n-type InAs nanowire tunnel FETs in the context of a systematic comparison with strained silicon MOSFETs. To this purpose, we exploited a 3-D simulator based on an eight-band k · p Hamiltonian within the nonequilibrium Green function formalism. Our model accounts for arbitrary crystal orientations and describes the strain implicitly by a modification of the band structure. The effect of acoustic- and optical-phonon scattering is also accounted for in the self-consistent Born approximation. Our results show that appropriate strain conditions in n-type InAs tunnel FETs induce a remarkable enhancement of Ion with a small degradation of the subthreshold slope, as well as large improvements in the Ioff versus Ion tradeoff for low Ioff and VDD values. Hence, an important widening of the range of Ioff and VDD values where tunnel FETs can compete with strained silicon MOSFETs is obtained.

Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs / Conzatti, Francesco; Pala, M; Esseni, David; Bano, E; Selmi, Luca. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 59:8(2012), pp. 2085-2092. [10.1109/TED.2012.2200253]

Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs

SELMI, Luca
2012

Abstract

This paper investigates the electrical performance improvements induced by appropriate strain conditions in n-type InAs nanowire tunnel FETs in the context of a systematic comparison with strained silicon MOSFETs. To this purpose, we exploited a 3-D simulator based on an eight-band k · p Hamiltonian within the nonequilibrium Green function formalism. Our model accounts for arbitrary crystal orientations and describes the strain implicitly by a modification of the band structure. The effect of acoustic- and optical-phonon scattering is also accounted for in the self-consistent Born approximation. Our results show that appropriate strain conditions in n-type InAs tunnel FETs induce a remarkable enhancement of Ion with a small degradation of the subthreshold slope, as well as large improvements in the Ioff versus Ion tradeoff for low Ioff and VDD values. Hence, an important widening of the range of Ioff and VDD values where tunnel FETs can compete with strained silicon MOSFETs is obtained.
2012
59
8
2085
2092
Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs / Conzatti, Francesco; Pala, M; Esseni, David; Bano, E; Selmi, Luca. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 59:8(2012), pp. 2085-2092. [10.1109/TED.2012.2200253]
Conzatti, Francesco; Pala, M; Esseni, David; Bano, E; Selmi, Luca
File in questo prodotto:
File Dimensione Formato  
Conzatti_TED2012.pdf

Accesso riservato

Dimensione 1.04 MB
Formato Adobe PDF
1.04 MB Adobe PDF   Visualizza/Apri   Richiedi una copia
Pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1162826
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 91
  • ???jsp.display-item.citation.isi??? 83
social impact