We carefully scrutinize the potential of ultrathin body strained (111) GaAs MOSFETs to achieve better performance than other GaAs-based channel FETs at scaled channel length and with relaxed thickness requirements, thanks to L-valleys enhanced density-of-states (DoS) and carrier transport. Calibrated multi-subband Monte Carlo simulations including scattering provide the modeling framework necessary for accurate simulations. The results show that L-valley-enhanced transport most likely will not yield the ION and switching time improvements observed in simple ballistic simulations, even if considering the ideal material properties and purely phonon scattering limited transport. In fact, the increased DoS and inversion charge at the virtual source provided by the L-valleys in the strained material is counterbalanced by an increased phonon scattering rate and reduced carrier velocity.

Quasi-Ballistic Gamma - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETs / Caruso, Enrico; Palestri, Pierpaolo; Lizzit, Daniel; Osgnach, Patrik; Esseni, David; Selmi, Luca. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - ELETTRONICO. - 63:12(2016), pp. 4685-4692. [10.1109/TED.2016.2612643]

Quasi-Ballistic Gamma - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETs

PALESTRI, Pierpaolo;SELMI, Luca
2016

Abstract

We carefully scrutinize the potential of ultrathin body strained (111) GaAs MOSFETs to achieve better performance than other GaAs-based channel FETs at scaled channel length and with relaxed thickness requirements, thanks to L-valleys enhanced density-of-states (DoS) and carrier transport. Calibrated multi-subband Monte Carlo simulations including scattering provide the modeling framework necessary for accurate simulations. The results show that L-valley-enhanced transport most likely will not yield the ION and switching time improvements observed in simple ballistic simulations, even if considering the ideal material properties and purely phonon scattering limited transport. In fact, the increased DoS and inversion charge at the virtual source provided by the L-valleys in the strained material is counterbalanced by an increased phonon scattering rate and reduced carrier velocity.
2016
63
12
4685
4692
Quasi-Ballistic Gamma - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETs / Caruso, Enrico; Palestri, Pierpaolo; Lizzit, Daniel; Osgnach, Patrik; Esseni, David; Selmi, Luca. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - ELETTRONICO. - 63:12(2016), pp. 4685-4692. [10.1109/TED.2016.2612643]
Caruso, Enrico; Palestri, Pierpaolo; Lizzit, Daniel; Osgnach, Patrik; Esseni, David; Selmi, Luca
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1162792
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 3
  • ???jsp.display-item.citation.isi??? 2
social impact