We investigate the effect of interface states at the channel/insulator interface of III-V MOSFETs by means of accurate Schr¨odinger-Poisson and Multi-subband Monte Carlo simulations. Traps in the conduction band are found to be the main responsible of the Fermi level pinning observed in the experiments and impact the mobility measurements, but have a limited influence on the current drive of short channel devices.
The impact of interface states on the mobility and the drive current of III-V MOSFETs / Osgnach, Patrik; Caruso, Enrico; Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Selmi, Luca. - STAMPA. - (2014), pp. 21-24. (Intervento presentato al convegno International Conference on Ultimate Integration on Silicon (ULIS) tenutosi a Stoccolma nel Aprile 2014) [10.1109/ULIS.2014.6813896].
The impact of interface states on the mobility and the drive current of III-V MOSFETs
PALESTRI, Pierpaolo;SELMI, Luca
2014
Abstract
We investigate the effect of interface states at the channel/insulator interface of III-V MOSFETs by means of accurate Schr¨odinger-Poisson and Multi-subband Monte Carlo simulations. Traps in the conduction band are found to be the main responsible of the Fermi level pinning observed in the experiments and impact the mobility measurements, but have a limited influence on the current drive of short channel devices.
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ULIS_Osgnach.pdf
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ULIS_Osgnach.pdf
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168.03 kB
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168.03 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
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