This paper reports the experimental investigation of hot carrier stress (HCS) and constant voltage stress (CVS) in high-κ Si-based tunnel FETs. For the devices in this paper, due to the large injection of cold carriers and to the presence of traps in the gate dielectric, the degradation of the transfer characteristics under CVS is much more severe than under HCS. The experimental results show that the sub-threshold swing remains stable under both HCS and CVS conditions, and it is not influenced by the stress-induced increase of the interface trap density.
Investigation of Hot Carrier Stress and Constant Voltage Stress in High-κ Si-Based TFETs / Ding, L.; Gnani, E.; Gerardin, S.; Bagatin, M.; Driussi, Francesco; Palestri, Pierpaolo; Selmi, Luca; Royer, C. Le; Paccagnella, A.. - In: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. - ISSN 1530-4388. - ELETTRONICO. - 15:2(2015), pp. 236-241. [10.1109/TDMR.2015.2423095]
Investigation of Hot Carrier Stress and Constant Voltage Stress in High-κ Si-Based TFETs
PALESTRI, Pierpaolo;SELMI, Luca;
2015
Abstract
This paper reports the experimental investigation of hot carrier stress (HCS) and constant voltage stress (CVS) in high-κ Si-based tunnel FETs. For the devices in this paper, due to the large injection of cold carriers and to the presence of traps in the gate dielectric, the degradation of the transfer characteristics under CVS is much more severe than under HCS. The experimental results show that the sub-threshold swing remains stable under both HCS and CVS conditions, and it is not influenced by the stress-induced increase of the interface trap density.
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