The Graphene Base Transistor (GBT) has been recently proposed to possibly overcome the THz limit for RF circuits. We developed a modelling framework to explore the GBT design space, the device optimization and the prediction of its RF performance. Via a proper scaling of the EBI and BCI thicknesses, the THz operation is achievable both in terms of fT and fmax. In this latter case, a very low RCONT value is required, thus it is necessary to improve the metal-graphene interface beyond state of the art graphene technology.
Simulation Study of the Graphene Base Transistor / Venica, Stefano; Driussi, Francesco; Palestri, Pierpaolo; Selmi, Luca. - ELETTRONICO. - (2017), pp. 11-12. (Intervento presentato al convegno 49TH ANNUAL MEETING OF THE ASSOCIAZIONE SOCIETÀ ITALIANA DI ELETTRONICA tenutosi a Palermo nel 21-23 Giugno 2017).
Simulation Study of the Graphene Base Transistor
SELMI, Luca
2017-01-01
Abstract
The Graphene Base Transistor (GBT) has been recently proposed to possibly overcome the THz limit for RF circuits. We developed a modelling framework to explore the GBT design space, the device optimization and the prediction of its RF performance. Via a proper scaling of the EBI and BCI thicknesses, the THz operation is achievable both in terms of fT and fmax. In this latter case, a very low RCONT value is required, thus it is necessary to improve the metal-graphene interface beyond state of the art graphene technology.
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