The PixFEL collaboration has developed the building blocks for an X-ray imager to be used in applications at FELs. In particular, slim edge pixel detectors with high detection efficiency over a broad energy range, from 1 to 12 keV, have been developed. Moreover, a multichannel readout chip, called PFM2 (PixFEL front-end Matrix 2) and consisting of 32 × 32 cells, has been designed and fabricated in a 65 nm CMOS technology. The pixel pitch is 110 μm, the overall area is around 16 mm2. In the chip, different solutions have been implemented for the readout channel, which includes a charge sensitive amplifier (CSA) with dynamic signal compression, a time-variant shaper and an A-To-D converter with a 10 bit resolution. The CSA can be configured in four different gain modes, so as to comply with photon energies in the 1 to 10 keV range. The paper will describe in detail the channel architecture and present the results from the characterization of PFM2. It will discuss the design of a new version of the chip, called PFM3, suitable for post-processing with peripheral, under-pad through silicon vias (TSVs), which are needed to develop four-side buttable chips and cover large surfaces with minimum inactive area.
A pixelated x-ray detector for diffraction imaging at next-generation high-rate FEL sources / Lodola, L.; Ratti, L.; Comotti, D.; Fabris, L.; Grassi, M.; Malcovati, P.; Manghisoni, M.; Re, V.; Traversi, G.; Vacchi, C.; Batignani, G.; Bettarini, S.; Forti, F.; Casarosa, G.; Morsani, F.; Paladino, A.; Paoloni, E.; Rizzo, G.; Benkechkache, M. A.; Dalla Betta, G. -F.; Mendicino, R.; Pancheri, L.; Verzellesi, G.; Xu, H.. - 10392:(2017), pp. 103920D-1-103920D-11. ( Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIX 2017 San Diego, California, USA 6-10 August 2017) [10.1117/12.2276966].
A pixelated x-ray detector for diffraction imaging at next-generation high-rate FEL sources
Verzellesi, G.;
2017
Abstract
The PixFEL collaboration has developed the building blocks for an X-ray imager to be used in applications at FELs. In particular, slim edge pixel detectors with high detection efficiency over a broad energy range, from 1 to 12 keV, have been developed. Moreover, a multichannel readout chip, called PFM2 (PixFEL front-end Matrix 2) and consisting of 32 × 32 cells, has been designed and fabricated in a 65 nm CMOS technology. The pixel pitch is 110 μm, the overall area is around 16 mm2. In the chip, different solutions have been implemented for the readout channel, which includes a charge sensitive amplifier (CSA) with dynamic signal compression, a time-variant shaper and an A-To-D converter with a 10 bit resolution. The CSA can be configured in four different gain modes, so as to comply with photon energies in the 1 to 10 keV range. The paper will describe in detail the channel architecture and present the results from the characterization of PFM2. It will discuss the design of a new version of the chip, called PFM3, suitable for post-processing with peripheral, under-pad through silicon vias (TSVs), which are needed to develop four-side buttable chips and cover large surfaces with minimum inactive area.
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