Editor's note: Retention time is one of the key parameters of emerging memories, which define the time duration the data can be retained when the power supply is removed. In this work, the authors investigate the forming voltage and the data retention of aluminum (Al)-doped HfO2-based RRAM devices and suggest a way to improve the device's data retention time. - - Yiran Chen, Duke University
Correlated Effects on Forming and Retention of Al Doping in HfO2-Based RRAM / Alayan, Mouhamad; Vianello, Elisa; De Salvo, Barbara; Perniola, Luca; Padovani, Andrea; Larcher, Luca. - In: IEEE DESIGN & TEST. - ISSN 2168-2356. - 34:3(2017), pp. 23-30. [10.1109/MDAT.2017.2682246]
Correlated Effects on Forming and Retention of Al Doping in HfO2-Based RRAM
Padovani, Andrea;Larcher, Luca
2017
Abstract
Editor's note: Retention time is one of the key parameters of emerging memories, which define the time duration the data can be retained when the power supply is removed. In this work, the authors investigate the forming voltage and the data retention of aluminum (Al)-doped HfO2-based RRAM devices and suggest a way to improve the device's data retention time. - - Yiran Chen, Duke University
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