Thin film Si1-xGex alloys have been grown on silicon by molecular beam epitaxy with nominal composition, x, between 10 and 20 at %. These heterostructures have several applications in band-engineering and in the field of device structures. Film thicknesses, germanium atomic fractions and tetragonal distortion were determined by three different techniques, i.e. Rutherford Backscattering Spectrometry-Channeling, Analytical Electron Microscopy and Double Crystal X-ray Diffractometry. The good agreement found between the various analytical results demonstrates that each technique is capable of a high level of accuracy and consistency. These characterization methods are therefore powerful tools for the precise control of the epitaxial layer growth parameters for the fabbrication of different device structures.
STRUCTURAL AND ANALYTICAL CHARACTERIZATION OF SI(1-X)GEX/SI HETEROSTRUCTURES BY RUTHERFORD BACKSCATTERING SPECTROMETRY AND CHANNELING, ANALYTICAL ELECTRON-MICROSCOPY AND DOUBLE CRYSTAL X-RAY-DIFFRACTOMETRY / Armigliato, A; Servidori, M; Cembali, F; Fabbri, R; Rosa, R; Corticelli, F; Govoni, D; Drigo, Av; Mazzer, M; Romanato, F; Frabboni, Stefano; Balboni, R; Iyer, Ss; Guerrieri, A.. - In: MICROSCOPY MICROANALYSIS MICROSTRUCTURES. - ISSN 1154-2799. - STAMPA. - 3:(1992), pp. 363-384.
STRUCTURAL AND ANALYTICAL CHARACTERIZATION OF SI(1-X)GEX/SI HETEROSTRUCTURES BY RUTHERFORD BACKSCATTERING SPECTROMETRY AND CHANNELING, ANALYTICAL ELECTRON-MICROSCOPY AND DOUBLE CRYSTAL X-RAY-DIFFRACTOMETRY
FRABBONI, Stefano;
1992
Abstract
Thin film Si1-xGex alloys have been grown on silicon by molecular beam epitaxy with nominal composition, x, between 10 and 20 at %. These heterostructures have several applications in band-engineering and in the field of device structures. Film thicknesses, germanium atomic fractions and tetragonal distortion were determined by three different techniques, i.e. Rutherford Backscattering Spectrometry-Channeling, Analytical Electron Microscopy and Double Crystal X-ray Diffractometry. The good agreement found between the various analytical results demonstrates that each technique is capable of a high level of accuracy and consistency. These characterization methods are therefore powerful tools for the precise control of the epitaxial layer growth parameters for the fabbrication of different device structures.
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