Measurements of the I(V) characteristic in Ovonic semiconductors are notoriously unstable. Experimental setups must therefore rely on pulsed schemes in which only the positive-slope branches of the characteristic are detected. This paper considers the time-dependent, trap-limited conduction model proposed by the authors for investigating this type of devices, and shows that the model is suitable for stability analysis. The conditions that make the measurement stable are assessed; also, examples of simulations in the oscillatory regime are given, in the field-driven case.

Ovonic Material for Memory Nano-Devices: stability of the I(V) measurements / Rudan, Massimo; Piccinini, Enrico; Buscemi, Fabrizio; Brunetti, Rossella. - STAMPA. - (2015), pp. 321-324. ((Intervento presentato al convegno 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015 tenutosi a Bologna nel January 26-28 2015 [10.1109/ULIS.2015.7063838].

Ovonic Material for Memory Nano-Devices: stability of the I(V) measurements

BUSCEMI, Fabrizio;BRUNETTI, Rossella
2015

Abstract

Measurements of the I(V) characteristic in Ovonic semiconductors are notoriously unstable. Experimental setups must therefore rely on pulsed schemes in which only the positive-slope branches of the characteristic are detected. This paper considers the time-dependent, trap-limited conduction model proposed by the authors for investigating this type of devices, and shows that the model is suitable for stability analysis. The conditions that make the measurement stable are assessed; also, examples of simulations in the oscillatory regime are given, in the field-driven case.
2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015
Bologna
January 26-28 2015
321
324
Rudan, Massimo; Piccinini, Enrico; Buscemi, Fabrizio; Brunetti, Rossella
Ovonic Material for Memory Nano-Devices: stability of the I(V) measurements / Rudan, Massimo; Piccinini, Enrico; Buscemi, Fabrizio; Brunetti, Rossella. - STAMPA. - (2015), pp. 321-324. ((Intervento presentato al convegno 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015 tenutosi a Bologna nel January 26-28 2015 [10.1109/ULIS.2015.7063838].
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/1105032
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