The two-dimensional surface electronic band structure of H:GaAs(110) is studied by angular resolved ultraviolet photoemission spectroscopy along the XBAR'-MBAR and XBAR-MBAR symmetry lines and in the high symmetry points of the surface Brillouin zone. Three surface state bands are resolved in the first 5 eV below the upper valence band edge. A comparison with theoretical band structure calculations yields a satisfactory agreement, giving evidence of hydrogen induced GaAs(110) surface derelaxation. The clean GaAs(110) surface electronic band structure is studied comparing results with available theoretical and experimental data.
VALENCE-BAND STATES OF H-GAAS(110) / Plesanovas, A; Tarabini, Ac; Abbati, I; Kaciulis, S; Paolicelli, G; Pasquali, Luca; Ruocco, A; Nannarone, Stefano. - In: SURFACE SCIENCE. - ISSN 0039-6028. - STAMPA. - 307-309:(1994), pp. 890-895. [10.1016/0039-6028(94)91510-5]
VALENCE-BAND STATES OF H-GAAS(110)
PASQUALI, Luca;NANNARONE, Stefano
1994
Abstract
The two-dimensional surface electronic band structure of H:GaAs(110) is studied by angular resolved ultraviolet photoemission spectroscopy along the XBAR'-MBAR and XBAR-MBAR symmetry lines and in the high symmetry points of the surface Brillouin zone. Three surface state bands are resolved in the first 5 eV below the upper valence band edge. A comparison with theoretical band structure calculations yields a satisfactory agreement, giving evidence of hydrogen induced GaAs(110) surface derelaxation. The clean GaAs(110) surface electronic band structure is studied comparing results with available theoretical and experimental data.
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