The realization of crystalline silicon tandem solar cells relies on silicon nanocrystal (Si NC) quantum dots as the absorber of the top solar cell. Quantum confinement of charge carriers within the nanocrystals permits to achieve a band gap up to 2 eV which can be adjusted according to the size of the nanocrystals. This enables the construction of all-crystalline Si tandem solar cells, and increases the theoretical efficiency limit from 33 % to 42.5 % due to the addition of a second band gap. In this work, the electrical and photovoltaic properties of Si NC films are assessed and the most prominent material systems (SiO2, Si3N4, SiC) are compared. P-i-n solar cells are presented which feature Si NC as the intrinsic absorber layer and permit to characterize quantum confinement electrically on device level. P-i-n solar cells with Si NC in SiC in the i-region have yielded open circuit voltages of up to 370mV.

Silicon quantum dots in photovoltaic devices: device fabrication, characterization and comparison of materials / Loper, P.; Canino, M.; Lopez Vidrier, J.; Schnabel, M.; Witzky, A.; Belletato, M.; Allegrezza, M.; Hiller, D.; Hartel, A.; Gutsch, S.; Hernandez, S.; Guerra, Roberto; Ossicini, Stefano; Garrido, B.; Janz, S.; Zacharias, M.. - STAMPA. - (2012), pp. 35-40. ((Intervento presentato al convegno 27th European Photovoltaic Solar Energy Conference and Exhibition tenutosi a Frankfurt nel 24-28 September 2012.

Silicon quantum dots in photovoltaic devices: device fabrication, characterization and comparison of materials

GUERRA, Roberto;OSSICINI, Stefano;
2012

Abstract

The realization of crystalline silicon tandem solar cells relies on silicon nanocrystal (Si NC) quantum dots as the absorber of the top solar cell. Quantum confinement of charge carriers within the nanocrystals permits to achieve a band gap up to 2 eV which can be adjusted according to the size of the nanocrystals. This enables the construction of all-crystalline Si tandem solar cells, and increases the theoretical efficiency limit from 33 % to 42.5 % due to the addition of a second band gap. In this work, the electrical and photovoltaic properties of Si NC films are assessed and the most prominent material systems (SiO2, Si3N4, SiC) are compared. P-i-n solar cells are presented which feature Si NC as the intrinsic absorber layer and permit to characterize quantum confinement electrically on device level. P-i-n solar cells with Si NC in SiC in the i-region have yielded open circuit voltages of up to 370mV.
27th European Photovoltaic Solar Energy Conference and Exhibition
Frankfurt
24-28 September 2012
35
40
Loper, P.; Canino, M.; Lopez Vidrier, J.; Schnabel, M.; Witzky, A.; Belletato, M.; Allegrezza, M.; Hiller, D.; Hartel, A.; Gutsch, S.; Hernandez, S.; Guerra, Roberto; Ossicini, Stefano; Garrido, B.; Janz, S.; Zacharias, M.
Silicon quantum dots in photovoltaic devices: device fabrication, characterization and comparison of materials / Loper, P.; Canino, M.; Lopez Vidrier, J.; Schnabel, M.; Witzky, A.; Belletato, M.; Allegrezza, M.; Hiller, D.; Hartel, A.; Gutsch, S.; Hernandez, S.; Guerra, Roberto; Ossicini, Stefano; Garrido, B.; Janz, S.; Zacharias, M.. - STAMPA. - (2012), pp. 35-40. ((Intervento presentato al convegno 27th European Photovoltaic Solar Energy Conference and Exhibition tenutosi a Frankfurt nel 24-28 September 2012.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/1063223
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