Silicon has become the most studied material in the past decades owing to its unique characteristics: Si is the second most abundant element (after oxygen) in the Earth’s crust, making up 25.7% of its mass; it can be produced with impurity levels of less than 10−9; it remains a semiconductor at higher temperatures than germanium; its native oxide is easily grown in a furnace and forms a better semiconductor/insulator interface than any other material. These properties have made Si the widest used material for electronic devices, such as photovoltaic (PV) cells, light emitters, lasers, environmental probes, and so on. Nevertheless, the use of Si in photonic applications remains highly limited because the indirect gap of the Si band structure—radiative interband transitions from the conduction-band minimum (Δ-point) to the top of the valence band (Γ-point)—requires electron–phonon coupling in order to satisfy the momentum conservation rule.

Silicon Nanostructures Embedded in SiO2 Matrices: Ab-Initio Results / Ossicini, Stefano; Guerra, Roberto. - STAMPA. - (2013), pp. 393-452.

Silicon Nanostructures Embedded in SiO2 Matrices: Ab-Initio Results

OSSICINI, Stefano;GUERRA, Roberto
2013

Abstract

Silicon has become the most studied material in the past decades owing to its unique characteristics: Si is the second most abundant element (after oxygen) in the Earth’s crust, making up 25.7% of its mass; it can be produced with impurity levels of less than 10−9; it remains a semiconductor at higher temperatures than germanium; its native oxide is easily grown in a furnace and forms a better semiconductor/insulator interface than any other material. These properties have made Si the widest used material for electronic devices, such as photovoltaic (PV) cells, light emitters, lasers, environmental probes, and so on. Nevertheless, the use of Si in photonic applications remains highly limited because the indirect gap of the Si band structure—radiative interband transitions from the conduction-band minimum (Δ-point) to the top of the valence band (Γ-point)—requires electron–phonon coupling in order to satisfy the momentum conservation rule.
Nanostructured Semiconductors: From Basic Research to Applications
978-981-4316-90-3
ATTUALE: Taylor & Francis
STATI UNITI D'AMERICA
Silicon Nanostructures Embedded in SiO2 Matrices: Ab-Initio Results / Ossicini, Stefano; Guerra, Roberto. - STAMPA. - (2013), pp. 393-452.
Ossicini, Stefano; Guerra, Roberto
File in questo prodotto:
File Dimensione Formato  
Nanostructured Semiconductors - First Proofs - Chapter 10.pdf

non disponibili

Descrizione: Articolo
Tipologia: Post-print dell'autore (bozza post referaggio)
Dimensione 3.4 MB
Formato Adobe PDF
3.4 MB Adobe PDF   Visualizza/Apri   Richiedi una copia
Pubblicazioni consigliate

Caricamento pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/1061655
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? ND
social impact