Breakdown mechanisms in AlGaN/GaN HEMT devices are here analyzed, placing particular emphasis in the analysis of GaN based device grown on silicon substrate. Based on combined experimental data and bi-dimensional numerical simulation we demonstrate that many physical mechanisms can contribute to increase the leakage current leading to the final breakdown of the device. In particular we show how band-to-band phenomena, rather than impact ionization, can be responsible of the premature breakdown even in double-heterostructure HEMTs.
Breakdown investigation in GaN-based MIS-HEMTdevices / Marino, Fabio Alessio; Bisi, Davide; Meneghini, Matteo; Verzellesi, Giovanni; Zanoni, Enrico; Hove, Marleen Van; You, Shuzhen; Decoutere, Stefaan; Marcon, Denis; Stoffels, Steve; Ronchi, Nicolo'; Meneghesso, Gaudenzio. - ELETTRONICO. - (2014), pp. 377-380. (Intervento presentato al convegno 44th European Solid-State Device Research Conference, ESSDERC 2014 tenutosi a Venezia, Italy nel September 22-26, 2014) [10.1109/ESSDERC.2014.6948839].
Breakdown investigation in GaN-based MIS-HEMTdevices
VERZELLESI, Giovanni;
2014
Abstract
Breakdown mechanisms in AlGaN/GaN HEMT devices are here analyzed, placing particular emphasis in the analysis of GaN based device grown on silicon substrate. Based on combined experimental data and bi-dimensional numerical simulation we demonstrate that many physical mechanisms can contribute to increase the leakage current leading to the final breakdown of the device. In particular we show how band-to-band phenomena, rather than impact ionization, can be responsible of the premature breakdown even in double-heterostructure HEMTs.Pubblicazioni consigliate
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