We present results from a combined experimental and numerical investigation of a blue InGaN/GaN LED test structure grown on a SiC substrate, confirming that tunneling represents a critical contribution to the sub-threshold forward bias current and discussing the relative importance of different trap-assisted electron tunneling processes.
Trap-assisted tunneling in InGaN/GaN LEDs: experiments and physics-based simulation / Mandurrino, M., Verzellesi, G., Goano, M., Vallone, M.E., Bertazzi, F., Ghione, G., Meneghini, M., Meneghesso, G., Zanoni, E.. - ELETTRONICO. - -:(2014), pp. 13-14. (14th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2014 Palma de Mallorca, Spain September 1-4, 2014) [10.1109/NUSOD.2014.6935332].
Trap-assisted tunneling in InGaN/GaN LEDs: experiments and physics-based simulation
VERZELLESI, Giovanni;
2014
Abstract
We present results from a combined experimental and numerical investigation of a blue InGaN/GaN LED test structure grown on a SiC substrate, confirming that tunneling represents a critical contribution to the sub-threshold forward bias current and discussing the relative importance of different trap-assisted electron tunneling processes.
Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris
