Surface-shift low-energy photoelectron diffraction has recently been revealed as a powerful tool for the determination of surface structures. We have applied this method to study clean and hydrogenated (1/4 of monolayer) GaAs(110) surfaces. A recently developed renormalized multiple-scattering theory [M. Biagini, Phys. Rev. B 48, 2974 (1993)] has been applied to the interpretation of As 3d polar spectra. Numerical computations have been carried out for several surface geometries, corresponding to different buckling angles and surface bond lengths. We have obtained a buckling angle =26°and 6°for clean and hydrogenated surfaces, respectively. As far as surface bond lengths are concerned, changes within +2% for the clean surface and ideal bond lengths for the hydrogenated surface were found.

SURFACE-SHIFT LOW-ENERGY PHOTOELECTRON DIFFRACTION - CLEAN AND HYDROGENATED GAAS(110) SURFACE-STRUCTURE RELAXATION / Ruocco, A; Biagini, M; Dibona, A; Gambacorti, N; Valeri, Sergio; Nannarone, Stefano; Santoni, A; Bonnet, J.. - In: PHYSICAL REVIEW. B, CONDENSED MATTER. - ISSN 0163-1829. - STAMPA. - 51:(1995), pp. 2399-2405.

SURFACE-SHIFT LOW-ENERGY PHOTOELECTRON DIFFRACTION - CLEAN AND HYDROGENATED GAAS(110) SURFACE-STRUCTURE RELAXATION

VALERI, Sergio;NANNARONE, Stefano;
1995

Abstract

Surface-shift low-energy photoelectron diffraction has recently been revealed as a powerful tool for the determination of surface structures. We have applied this method to study clean and hydrogenated (1/4 of monolayer) GaAs(110) surfaces. A recently developed renormalized multiple-scattering theory [M. Biagini, Phys. Rev. B 48, 2974 (1993)] has been applied to the interpretation of As 3d polar spectra. Numerical computations have been carried out for several surface geometries, corresponding to different buckling angles and surface bond lengths. We have obtained a buckling angle =26°and 6°for clean and hydrogenated surfaces, respectively. As far as surface bond lengths are concerned, changes within +2% for the clean surface and ideal bond lengths for the hydrogenated surface were found.
1995
51
2399
2405
SURFACE-SHIFT LOW-ENERGY PHOTOELECTRON DIFFRACTION - CLEAN AND HYDROGENATED GAAS(110) SURFACE-STRUCTURE RELAXATION / Ruocco, A; Biagini, M; Dibona, A; Gambacorti, N; Valeri, Sergio; Nannarone, Stefano; Santoni, A; Bonnet, J.. - In: PHYSICAL REVIEW. B, CONDENSED MATTER. - ISSN 0163-1829. - STAMPA. - 51:(1995), pp. 2399-2405.
Ruocco, A; Biagini, M; Dibona, A; Gambacorti, N; Valeri, Sergio; Nannarone, Stefano; Santoni, A; Bonnet, J.
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/10311
Citazioni
  • ???jsp.display-item.citation.pmc??? 0
  • Scopus 19
  • ???jsp.display-item.citation.isi??? 19
social impact