Metastable deexcitation spectroscopy (MDS) was applied to the study of the electronic structure of Sb/GaAs(110) and H:GaAs(110) systems. For both systems valuable insights into the surface electronic structure (effective surface density of states and surface charge density) were obtained. A surface to volume ratio extremely higher than photoemission was obtained for MDS. For both systems new features, never observed by more conventional surface spectroscopies, were detected.
SURFACE-DENSITY OF STATES OF SB/GAAS(110) AND HGAAS(110) BY METASTABLE DEEXCITATION SPECTROSCOPY / Pasquali, Luca; Plesanovas, A; Ruocco, A; Tarabini, Ac; Nannarone, Stefano; Abbati, I; Canepa, M; Mattera, L; Terreni, S.. - In: JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA. - ISSN 0368-2048. - STAMPA. - 72:(1995), pp. 59-63. [10.1016/0368-2048(94)02335-2]
SURFACE-DENSITY OF STATES OF SB/GAAS(110) AND HGAAS(110) BY METASTABLE DEEXCITATION SPECTROSCOPY
PASQUALI, Luca;NANNARONE, Stefano;
1995
Abstract
Metastable deexcitation spectroscopy (MDS) was applied to the study of the electronic structure of Sb/GaAs(110) and H:GaAs(110) systems. For both systems valuable insights into the surface electronic structure (effective surface density of states and surface charge density) were obtained. A surface to volume ratio extremely higher than photoemission was obtained for MDS. For both systems new features, never observed by more conventional surface spectroscopies, were detected.
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