Silicon oxynitride samples deposited by plasma-enhanced chemical vapour deposition are characterized by different techniques to obtain their stoichiometry and density. From these data and applying the tetrahedron model, the optical functions in the range from 0.23 to 0.90 mu m are calculated and compared with the results of spectroscopic ellipsometry.
Silicon oxynitride study by the tetrahedron model and by spectroscopic ellipsometry / Sassella, A; Lucarno, P; Borghesi, A; Corni, Federico; Rojas, S; Zanotti, L.. - In: JOURNAL OF NON-CRYSTALLINE SOLIDS. - ISSN 0022-3093. - STAMPA. - 187:(1995), pp. 395-402.
Silicon oxynitride study by the tetrahedron model and by spectroscopic ellipsometry
CORNI, Federico;
1995
Abstract
Silicon oxynitride samples deposited by plasma-enhanced chemical vapour deposition are characterized by different techniques to obtain their stoichiometry and density. From these data and applying the tetrahedron model, the optical functions in the range from 0.23 to 0.90 mu m are calculated and compared with the results of spectroscopic ellipsometry.
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