statistiche ricercatore

Nazione	#
US - Stati Uniti d'America	1.658
GB - Regno Unito	291
CN - Cina	198
SG - Singapore	148
SE - Svezia	135
DE - Germania	68
HK - Hong Kong	68
BR - Brasile	55
RU - Federazione Russa	47
UA - Ucraina	40
TR - Turchia	31
FR - Francia	30
IT - Italia	29
FI - Finlandia	27
KR - Corea	15
BG - Bulgaria	14
VN - Vietnam	14
AR - Argentina	7
IN - India	7
RO - Romania	7
BD - Bangladesh	5
CA - Canada	5
IE - Irlanda	5
IR - Iran	4
MX - Messico	4
NL - Olanda	4
BE - Belgio	3
CO - Colombia	3
IQ - Iraq	3
JP - Giappone	3
MA - Marocco	3
PL - Polonia	3
ES - Italia	2
GR - Grecia	2
MY - Malesia	2
SK - Slovacchia (Repubblica Slovacca)	2
TH - Thailandia	2
ZA - Sudafrica	2
AE - Emirati Arabi Uniti	1
AL - Albania	1
AT - Austria	1
AU - Australia	1
BY - Bielorussia	1
CL - Cile	1
CZ - Repubblica Ceca	1
ID - Indonesia	1
JM - Giamaica	1
LT - Lituania	1
MK - Macedonia	1
NZ - Nuova Zelanda	1
OM - Oman	1
PT - Portogallo	1
Totale	2.960

Nome	#
Symmetry lowering of pentacene molecular states interacting with a Cu surface	281
Space charge layer, metallization and collective excitations of the Bi/GaAs interface.	261
Inelastic-electron-scattering investigation of clean and hydrogen-exposed InP(110) surfaces	260
HREELS INVESTIGATION OF CLEAN AND HYDROGEN-INP(110) SURFACES	242
Cesium-induced electronic states and space-charge-layer formation in Cs/InSb(110) interface	233
Photoemission investigation of the alkali-metal-induced two-dimensional electron gas at the Si(111)(1 X 1):H surface	230
Azimuthal Dependence of Reflection High Resolution Electron Energy Loss of Si(111) (2x1)	227
Single particle and collective excitations of a two-dimensional electron gas at the Cs/InAs(110) Surface	226
alpha-Sn pseudomorphic growth on InSb (111) and ((111))under-bar surfaces: a high-resolution photoemission study	199
Space charge layer at metal/InSb(110) interfaces	193
Inelastic Electron Scattering Investagation of the Sb/GaAs(110) System	163
Loss features in the HREEL spectra of the K/GaAs(110) system	158
Collective and Vibrational Excitations on the n-doped GaAs(110) Surface	157
QUASI-2-DIMENSIONAL ELECTRON-GAS AT SUBMONOLAYER COVERAGES OF CS ON INSB(110)	142
Totale	2.972

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2020/2021	222	0	0	0	0	25	21	31	39	23	32	33	18
2021/2022	302	3	23	40	33	10	15	14	13	29	14	58	50
2022/2023	329	34	48	19	31	50	55	4	39	38	3	7	1
2023/2024	156	2	12	18	20	31	14	23	12	0	0	11	13
2024/2025	579	18	4	8	48	117	83	38	44	70	12	63	74
2025/2026	355	91	46	122	82	14	0	0	0	0	0	0	0
Totale													2.972