Free-standing semiconductor nanowires in combination with advanced gate-architectures hold an exceptional promise as miniaturized building blocks in future integrated circuits. However, semiconductor nanowires are often corrupted by an increased number of close-by surface states, which are detrimental with respect to their optical and electronic properties. This conceptual challenge hampers their potentials in high-speed electronics and therefore new concepts are needed in order to enhance carrier mobilities. We have introduced a novel type of core−shell nanowire heterostructures that incorporate modulation or remote doping and hence may lead to high-mobility electrons. We demonstrate the validity of such concepts using inelastic light scattering to study single modulation-doped GaAs/Al0.16Ga0.84As core-multishell nanowires grown on silicon. We conclude from a detailed experimental study and theoretical analysis of the observed spin and charge density fluctuations that one- and two-dimensional electron channels are formed in a GaAs coaxial quantum well spatially separated from the donor ions. A total carrier density of about 3 × 107 cm−1 and an electron mobility in the order of 50 000 cm2/ (V s) are estimated. Spatial mappings of individual GaAs/Al0.16Ga0.84As core−multishell nanowires show inhomogeneous properties along the wires probably related to structural defects. The first demonstration of such unambiguous 1D- and 2Delectron channels and the respective charge carrier properties in these advanced nanowire-based quantum heterostructures is the basis for various novel nanoelectronic and photonic devices.

High Mobility One- and Two-Dimensional Electron Systems in Nanowire-Based Quantum Heterostructures / Stefan, Funk; Miguel, Royo; Ilaria, Zardo; Daniel, Rudolph; Stefanie, Morkötter; Benedikt, Mayer; Jonathan, Becker; Alexander, Bechtold; Sonja, Matich; Markus, Döblinger; Max, Bichler; Gregor, Koblmüller; Jonathan J., Finley; Andrea, Bertoni; Goldoni, Guido; Gerhard, Abstreiter. - In: NANO LETTERS. - ISSN 1530-6984. - STAMPA. - 13:(2013), pp. 6189-6196. [10.1021/nl403561w]

High Mobility One- and Two-Dimensional Electron Systems in Nanowire-Based Quantum Heterostructures

GOLDONI, Guido;
2013

Abstract

Free-standing semiconductor nanowires in combination with advanced gate-architectures hold an exceptional promise as miniaturized building blocks in future integrated circuits. However, semiconductor nanowires are often corrupted by an increased number of close-by surface states, which are detrimental with respect to their optical and electronic properties. This conceptual challenge hampers their potentials in high-speed electronics and therefore new concepts are needed in order to enhance carrier mobilities. We have introduced a novel type of core−shell nanowire heterostructures that incorporate modulation or remote doping and hence may lead to high-mobility electrons. We demonstrate the validity of such concepts using inelastic light scattering to study single modulation-doped GaAs/Al0.16Ga0.84As core-multishell nanowires grown on silicon. We conclude from a detailed experimental study and theoretical analysis of the observed spin and charge density fluctuations that one- and two-dimensional electron channels are formed in a GaAs coaxial quantum well spatially separated from the donor ions. A total carrier density of about 3 × 107 cm−1 and an electron mobility in the order of 50 000 cm2/ (V s) are estimated. Spatial mappings of individual GaAs/Al0.16Ga0.84As core−multishell nanowires show inhomogeneous properties along the wires probably related to structural defects. The first demonstration of such unambiguous 1D- and 2Delectron channels and the respective charge carrier properties in these advanced nanowire-based quantum heterostructures is the basis for various novel nanoelectronic and photonic devices.
2013
13
6189
6196
High Mobility One- and Two-Dimensional Electron Systems in Nanowire-Based Quantum Heterostructures / Stefan, Funk; Miguel, Royo; Ilaria, Zardo; Daniel, Rudolph; Stefanie, Morkötter; Benedikt, Mayer; Jonathan, Becker; Alexander, Bechtold; Sonja, Matich; Markus, Döblinger; Max, Bichler; Gregor, Koblmüller; Jonathan J., Finley; Andrea, Bertoni; Goldoni, Guido; Gerhard, Abstreiter. - In: NANO LETTERS. - ISSN 1530-6984. - STAMPA. - 13:(2013), pp. 6189-6196. [10.1021/nl403561w]
Stefan, Funk; Miguel, Royo; Ilaria, Zardo; Daniel, Rudolph; Stefanie, Morkötter; Benedikt, Mayer; Jonathan, Becker; Alexander, Bechtold; Sonja, Matich; Markus, Döblinger; Max, Bichler; Gregor, Koblmüller; Jonathan J., Finley; Andrea, Bertoni; Goldoni, Guido; Gerhard, Abstreiter
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/989904
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