We present a home-built high-vacuum system for performing organic semiconductor thin-film growth and its electrical characterization during deposition (real-time) or after deposition (in situ). Since the environment conditions remain unchanged during the deposition and electrical characterization process, a direct correlation between growth mode and electrical properties of thin film can be obtained. Deposition rate and substrate temperature can be systematically set in the range 0.1-10 ML/min and RT-150 degrees C, respectively. The sample-holder configuration allows the simultaneous electrical monitoring of up to five organic thin-film transistors (OTFTs). The OTFTs parameters such as charge carrier mobility mu, threshold voltage V(TH), and the on-off ratio I(on)/I(off) are studied as a function of the semiconductor thickness, with a submonolayer accuracy. Design, operation, and performance of the setup are detailed. As an example, the in situ and real-time electrical characterization of pentacene TFTs is reported.
A high-vacuum deposition system for in situ and real-time electrical characterization of organic thin-film transistors / S. D., Quiroga; A., Shehu; C., Albonetti; M., Murgia; P., Stoliar; F., Borgatti; Biscarini, Fabio. - In: REVIEW OF SCIENTIFIC INSTRUMENTS. - ISSN 0034-6748. - 82:2(2011), pp. 025110--. [10.1063/1.3534007]
A high-vacuum deposition system for in situ and real-time electrical characterization of organic thin-film transistors
BISCARINI, FABIO
2011
Abstract
We present a home-built high-vacuum system for performing organic semiconductor thin-film growth and its electrical characterization during deposition (real-time) or after deposition (in situ). Since the environment conditions remain unchanged during the deposition and electrical characterization process, a direct correlation between growth mode and electrical properties of thin film can be obtained. Deposition rate and substrate temperature can be systematically set in the range 0.1-10 ML/min and RT-150 degrees C, respectively. The sample-holder configuration allows the simultaneous electrical monitoring of up to five organic thin-film transistors (OTFTs). The OTFTs parameters such as charge carrier mobility mu, threshold voltage V(TH), and the on-off ratio I(on)/I(off) are studied as a function of the semiconductor thickness, with a submonolayer accuracy. Design, operation, and performance of the setup are detailed. As an example, the in situ and real-time electrical characterization of pentacene TFTs is reported.
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