We present a home-built high-vacuum system for performing organic semiconductor thin-film growth and its electrical characterization during deposition (real-time) or after deposition (in situ). Since the environment conditions remain unchanged during the deposition and electrical characterization process, a direct correlation between growth mode and electrical properties of thin film can be obtained. Deposition rate and substrate temperature can be systematically set in the range 0.1-10 ML/min and RT-150 degrees C, respectively. The sample-holder configuration allows the simultaneous electrical monitoring of up to five organic thin-film transistors (OTFTs). The OTFTs parameters such as charge carrier mobility mu, threshold voltage V(TH), and the on-off ratio I(on)/I(off) are studied as a function of the semiconductor thickness, with a submonolayer accuracy. Design, operation, and performance of the setup are detailed. As an example, the in situ and real-time electrical characterization of pentacene TFTs is reported.

A high-vacuum deposition system for in situ and real-time electrical characterization of organic thin-film transistors / S. D., Quiroga; A., Shehu; C., Albonetti; M., Murgia; P., Stoliar; F., Borgatti; Biscarini, Fabio. - In: REVIEW OF SCIENTIFIC INSTRUMENTS. - ISSN 0034-6748. - 82:2(2011), pp. 025110--. [10.1063/1.3534007]

A high-vacuum deposition system for in situ and real-time electrical characterization of organic thin-film transistors

BISCARINI, FABIO
2011

Abstract

We present a home-built high-vacuum system for performing organic semiconductor thin-film growth and its electrical characterization during deposition (real-time) or after deposition (in situ). Since the environment conditions remain unchanged during the deposition and electrical characterization process, a direct correlation between growth mode and electrical properties of thin film can be obtained. Deposition rate and substrate temperature can be systematically set in the range 0.1-10 ML/min and RT-150 degrees C, respectively. The sample-holder configuration allows the simultaneous electrical monitoring of up to five organic thin-film transistors (OTFTs). The OTFTs parameters such as charge carrier mobility mu, threshold voltage V(TH), and the on-off ratio I(on)/I(off) are studied as a function of the semiconductor thickness, with a submonolayer accuracy. Design, operation, and performance of the setup are detailed. As an example, the in situ and real-time electrical characterization of pentacene TFTs is reported.
2011
82
2
025110
-
A high-vacuum deposition system for in situ and real-time electrical characterization of organic thin-film transistors / S. D., Quiroga; A., Shehu; C., Albonetti; M., Murgia; P., Stoliar; F., Borgatti; Biscarini, Fabio. - In: REVIEW OF SCIENTIFIC INSTRUMENTS. - ISSN 0034-6748. - 82:2(2011), pp. 025110--. [10.1063/1.3534007]
S. D., Quiroga; A., Shehu; C., Albonetti; M., Murgia; P., Stoliar; F., Borgatti; Biscarini, Fabio
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/963102
Citazioni
  • ???jsp.display-item.citation.pmc??? 2
  • Scopus 11
  • ???jsp.display-item.citation.isi??? 11
social impact