A computational analysis of light emission from hot carriers in GaAs due to direct intraband conduction-conduction (c-c) transitions is presented. The emission rates have been evaluated by means of a Full-Band Monte-Carlo simulator (FBMC). Results have been obtained for the emission rate as a function of the photon energy, for the emitted and absorbed light polarization along and perpendicular to the electric field direction. Comparison has been made with available experimental data in MESFETs.
Full-band Monte Carlo analysis of hot-carrier light emission in GaAs / Ferretti, I; Abramo, A; Brunetti, Rossella; Jacoboni, Carlo. - In: PHYSICA STATUS SOLIDI B-BASIC RESEARCH. - ISSN 0370-1972. - STAMPA. - 204:(1997), pp. 538-540.
Full-band Monte Carlo analysis of hot-carrier light emission in GaAs
BRUNETTI, Rossella;JACOBONI, Carlo
1997
Abstract
A computational analysis of light emission from hot carriers in GaAs due to direct intraband conduction-conduction (c-c) transitions is presented. The emission rates have been evaluated by means of a Full-Band Monte-Carlo simulator (FBMC). Results have been obtained for the emission rate as a function of the photon energy, for the emitted and absorbed light polarization along and perpendicular to the electric field direction. Comparison has been made with available experimental data in MESFETs.
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