Using He atom scattering, layer-by-layer erosion of InSb(110) by low energy ion bombardment has been observed to proceed via nucleation of vacancy islands, island growth and coalescence. The mechanism is in full agreement with theoretical models developed for crystal growth, with diffusing adatoms substituted by diffusing vacancies. In particular it has been observed that coalescence of the vacancy islands sets in after the removal of small fractions of a monolayer and that the average terrace width increases with increasing number of sputtered monolayers.
Inverse growth kinetics on InSb(110) / Cvetko, D.; DE RENZI, Valentina; Floreano, L.; Morgante, A.; Peloi, M.; Tommasini, F.; Chab, V.; Prince, K. C.. - In: SURFACE SCIENCE. - ISSN 0039-6028. - STAMPA. - 323:(1995), pp. L305-L310.
Inverse growth kinetics on InSb(110)
DE RENZI, Valentina;
1995
Abstract
Using He atom scattering, layer-by-layer erosion of InSb(110) by low energy ion bombardment has been observed to proceed via nucleation of vacancy islands, island growth and coalescence. The mechanism is in full agreement with theoretical models developed for crystal growth, with diffusing adatoms substituted by diffusing vacancies. In particular it has been observed that coalescence of the vacancy islands sets in after the removal of small fractions of a monolayer and that the average terrace width increases with increasing number of sputtered monolayers.
| File | Dimensione | Formato | |
|---|---|---|---|
|
inverse_growth_SS95.pdf
Accesso riservato
Tipologia:
AAM - Versione dell'autore revisionata e accettata per la pubblicazione
Dimensione
573.96 kB
Formato
Adobe PDF
|
573.96 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris
