We present a high resolution electron energy loss spectroscopy investigation of the Bi/[n-type GaAs(110)] system. Analysis of the elastic peak intensity, of the substrate's Fuchs-Kliewer phonon and dopant-induced free carrier plasmon, shows the influence exerted on GaAs by the first semiconducting Bi monolayer and by the subsequent semimetallic clusters at higher coverage.
VIBRATIONAL AND COLLECTIVE EXCITATIONS IN THE BI/GAAS(110) SYSTEM / Mariani, C; DE RENZI, Valentina; Compano, R.. - In: APPLIED SURFACE SCIENCE. - ISSN 0169-4332. - ELETTRONICO. - 56-8:(1992), pp. 247-251. [10.1016/0169-4332(92)90242-P]
VIBRATIONAL AND COLLECTIVE EXCITATIONS IN THE BI/GAAS(110) SYSTEM
DE RENZI, Valentina;
1992
Abstract
We present a high resolution electron energy loss spectroscopy investigation of the Bi/[n-type GaAs(110)] system. Analysis of the elastic peak intensity, of the substrate's Fuchs-Kliewer phonon and dopant-induced free carrier plasmon, shows the influence exerted on GaAs by the first semiconducting Bi monolayer and by the subsequent semimetallic clusters at higher coverage.
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