A high resolution electron-energy-loss spectroscopy investigation of the Bi/[n-GaAs(110)] interface grown at room temperature is presented. Analysis of the Fuchs-Kliewer phonon and of the dopant-induced free carrier plasmon is performed through an appropriate fit to the data, by using a dielectric model calculation. A Fermi level pinning of 0.6 eV is determined at one monolayer coverage for this semiconducting interface, and at the present doping level (n-type, n almost-equal-to 2.7 x 10(18) cm-3). The low-energy electronic properties of a 700 angstrom thick Bi crystal grown on GaAs(110) are also studied, and electronic interband transitions at 47 and approximately 200 meV are singled out in semimetallic bismuth.
ELECTRONIC AND DIELECTRIC-PROPERTIES OF BI GROWN ON GAAS(110) / DE RENZI, Valentina; Betti, M. G.; Mariani, C.. - In: SURFACE SCIENCE. - ISSN 0039-6028. - ELETTRONICO. - 287:(1993), pp. 550-553. [10.1016/0039-6028(93)90840-G]
ELECTRONIC AND DIELECTRIC-PROPERTIES OF BI GROWN ON GAAS(110)
DE RENZI, Valentina;
1993
Abstract
A high resolution electron-energy-loss spectroscopy investigation of the Bi/[n-GaAs(110)] interface grown at room temperature is presented. Analysis of the Fuchs-Kliewer phonon and of the dopant-induced free carrier plasmon is performed through an appropriate fit to the data, by using a dielectric model calculation. A Fermi level pinning of 0.6 eV is determined at one monolayer coverage for this semiconducting interface, and at the present doping level (n-type, n almost-equal-to 2.7 x 10(18) cm-3). The low-energy electronic properties of a 700 angstrom thick Bi crystal grown on GaAs(110) are also studied, and electronic interband transitions at 47 and approximately 200 meV are singled out in semimetallic bismuth.
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