The spectral density at the Fermi energy and the formation of adlayer-induced electronic states is studied by means of high energy resolution ultraviolet photoemission spectroscopy. A highly ordered (1x1)-Bi monolayer deposited on InAs(110) induces a well-resolved, occupied electronic state in the InAs surface gap, attributed to p-like dangling bonds at the Bi atomic chains. Appropriate annealing of a Bi multilayer produces a (1x2)-symmetry stable phase. Evolution of the spectral density close to the Fermi edge brings to light the metallicity of the (1 x 2)-Bi layer induced by Bi-Bi bonding in the atomic chains.
Gap-state formation in two-dimensional ordered Bi layers on InAs(110) / Betti, Mg; Corradini, Valdis; DEL PENNINO, Umberto; DE RENZI, Valentina; Fantini, Paolo; Mariani, Carlo. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - STAMPA. - 58:(1998), pp. R4231-R4234.
Gap-state formation in two-dimensional ordered Bi layers on InAs(110)
CORRADINI, Valdis;DEL PENNINO, Umberto;DE RENZI, Valentina;FANTINI, Paolo;MARIANI, Carlo
1998
Abstract
The spectral density at the Fermi energy and the formation of adlayer-induced electronic states is studied by means of high energy resolution ultraviolet photoemission spectroscopy. A highly ordered (1x1)-Bi monolayer deposited on InAs(110) induces a well-resolved, occupied electronic state in the InAs surface gap, attributed to p-like dangling bonds at the Bi atomic chains. Appropriate annealing of a Bi multilayer produces a (1x2)-symmetry stable phase. Evolution of the spectral density close to the Fermi edge brings to light the metallicity of the (1 x 2)-Bi layer induced by Bi-Bi bonding in the atomic chains.
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