Exciton formation and relaxation in GaAs bulk epilayers have been studied by means of time-resolved photoluminescence techniques. It is found that the time evolution of the free exciton luminescence, nonresonantly excited at low temperature and low intensity, is extremely slow, with a rise time of the order of 1 ns and a decay time of several ns. Simulations based on Monte Carlo solution of the set of coupled Boltzmann-like equations for free carriers and excitons show a nice agreement with the experimental data, and suggest a dominant role played by acoustic phonons in the exciton relaxation. [S0163-1829(98)53044-5].
Exciton formation and relaxation in GaAs epilayers / Gurioli, M; Borri, P; Colocci, M; Gulia, M; Rossi, F; Molinari, Elisa; Selbmann, Pe; Lugli, P.. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - STAMPA. - 58:(1998), pp. 13403-13406.
Exciton formation and relaxation in GaAs epilayers
MOLINARI, Elisa;
1998
Abstract
Exciton formation and relaxation in GaAs bulk epilayers have been studied by means of time-resolved photoluminescence techniques. It is found that the time evolution of the free exciton luminescence, nonresonantly excited at low temperature and low intensity, is extremely slow, with a rise time of the order of 1 ns and a decay time of several ns. Simulations based on Monte Carlo solution of the set of coupled Boltzmann-like equations for free carriers and excitons show a nice agreement with the experimental data, and suggest a dominant role played by acoustic phonons in the exciton relaxation. [S0163-1829(98)53044-5].
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