By ultraviolet photoemission spectroscopy and high-resolution electron energy loss spectroscopy we have detected the formation of a charge accumulation layer at the surface of a hydrogenated Si(111)(1 x 1) single crystal at very low potassium coverages.
Surface Modification of InAs(110) Surface by Low Energy Ion Sputtering / V., Martinelli; L., Siller; M. G., Betti; C., Mariani; DEL PENNINO, Umberto. - In: SURFACE SCIENCE. - ISSN 0039-6028. - STAMPA. - 391:(1997), pp. 73-80.
Surface Modification of InAs(110) Surface by Low Energy Ion Sputtering
DEL PENNINO, Umberto
1997
Abstract
By ultraviolet photoemission spectroscopy and high-resolution electron energy loss spectroscopy we have detected the formation of a charge accumulation layer at the surface of a hydrogenated Si(111)(1 x 1) single crystal at very low potassium coverages.
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