The atomic structure at the interface of a 180° rotated single-crystal NiSi2 film on Si(111) has been determined by a new thin-film ion-channeling method, using ultrahigh depth resolution. The Ni atoms at the interface are found to be sevenfold coordinated. The bonds across the interface are slightly contracted.
Real-space determination of atomic structure and bond relaxation at the NiSi2-Si(111) interface / E. J., van Loenen; J. W. M., Frenken; J. F., van der Veen; Valeri, Sergio. - In: PHYSICAL REVIEW LETTERS. - ISSN 0031-9007. - STAMPA. - 32:(1985), pp. 827-830.
Real-space determination of atomic structure and bond relaxation at the NiSi2-Si(111) interface
VALERI, Sergio
1985
Abstract
The atomic structure at the interface of a 180° rotated single-crystal NiSi2 film on Si(111) has been determined by a new thin-film ion-channeling method, using ultrahigh depth resolution. The Ni atoms at the interface are found to be sevenfold coordinated. The bonds across the interface are slightly contracted.
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